Infineon and NVIDIA Expand 800V DC GaN Power Collaboration for 1 MW AI Racks

Infineon Technologies announced an expanded collaboration with NVIDIA $NVDA on October 21 at GTC Berlin to jointly develop gallium nitride (GaN) high-voltage intermediate bus converter (IBC) solutions for 800V direct current (800V DC) AI data center architectures. The power delivery architecture is designed for high-power AI computing systems consuming up to 1 MW per rack, with gradual deployment expected to begin in 2027. Using its CoolGaN portfolio and high-frequency switching technology, Infineon will address multiple conversion configurations, including 800V-to-50V and 800V-to-12V, for NVIDIA’s MGX open modular reference architecture. Building on an initial May 2025 initiative that covered both silicon carbide (SiC) and GaN, the expanded effort focuses on increasing power density, reducing delivery losses, lowering cooling hardware requirements, and enabling live hot-swapping of server motherboards during maintenance.