Samsung to Reportedly Use TSMC 3nm Tech for Nvidia Custom HBM Chips

Samsung Electronics will reportedly use TSMC's 3-nanometre process to manufacture base dies for Nvidia's next-generation custom high-bandwidth memory (NVHBM) chips, according to the Seoul Economic Daily. The arrangement would mark the first time Samsung has partnered with its Taiwanese contract chipmaking rival at the HBM manufacturing stage. Citing industry sources, the newspaper reported that Nvidia requested Samsung, SK Hynix, and Micron Technology all use TSMC's 3nm process for NVHBM base dies alongside sixth-generation DRAM technology for the core dies. Unveiled in August, the NVHBM architecture integrates Nvidia's custom memory controller directly into the base die to standardize implementation across multiple memory suppliers. Samsung accepted Nvidia's terms after an internal review, though it plans to keep its in-house production model for standard HBM and custom chips for other clients while evaluating if its own foundry could serve as backup capacity if NVHBM demand exceeds TSMC's supply.