SK hynix Breaks Ground on $4B Indiana HBM Advanced Packaging Plant

SK hynix began construction on a $4B advanced packaging, testing, and R&D facility in West Lafayette, Indiana, dedicated to next-generation high-bandwidth memory. The facility is scheduled to open its cleanroom in October 2028 and begin volume production in the second half of 2029, roughly one year later than initially planned. The Indiana site will not manufacture raw DRAM wafers, instead packaging HBM stacks using DRAM wafers fabricated in South Korea alongside base dies sourced from South Korea, Taiwan, or the US. Once commercial operations begin, the plant is expected to employ approximately 1,000 workers while hosting an Advanced Packaging R&D Testbed in partnership with Purdue University. "The United States is the epicenter of AI innovation, bringing together premier customers, top-tier R&D capabilities, and partners and Indiana fab will become a gateway to deliver first Made in USA HBM products." — Kwak Noh-Jung